SI7100DN-T1-E3

Vishay Siliconix

SI7100DN-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 8V 35A PPAK1212-8

ObsoletePowerPAK® 1212-8Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.5mOhm @ 15A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs105 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds3810 pF @ 4 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage8 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Max Power Dissipation3.8W (Ta), 52W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerPAK® 1212-8
Supplier Device PackagePowerPAK® 1212-8

Environmental

Operating Temperature-50°C~150°C(TJ)