SI6473DQ-T1-E3

Vishay Siliconix

SI6473DQ-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 20V 6.2A 8TSSOP

Obsolete8-TSSOP (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12.5mOhm @ 9.5A, 4.5V
Base Product NumberSI6473
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)
Max Power Dissipation1.08W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

Environmental

Operating Temperature-55°C~150°C(TJ)