SI6463BDQ-T1-E3

Vishay Siliconix

SI6463BDQ-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 20V 6.2A 8-TSSOP

Obsolete8-TSSOP (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 7.4A, 4.5V
Base Product NumberSI6463
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs60 nC @ 5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id800mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)

Mechanical

PackageCut Tape (CT)
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP