SI6415DQ-T1-E3

Vishay Siliconix

SI6415DQ-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 30V 6.5A 8TSSOP

Active8-TSSOP (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs19mOhm @ 6.5A, 10V
Base Product NumberSI6415
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 250µA (Min)

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Max Power Dissipation1.5W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

Environmental

Operating Temperature-55°C~150°C(TJ)