SI6404DQ-T1-E3

Vishay Siliconix

SI6404DQ-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 30V 8.6A 8TSSOP

Obsolete8-TSSOP (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9mOhm @ 11A, 10V
Base Product NumberSI6404
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs48 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C8.6A (Ta)
Max Power Dissipation1.08W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

Environmental

Operating Temperature-55°C~150°C(TJ)