SI5999EDU-T1-GE3

Vishay Siliconix

SI5999EDU-T1-GE3

Datasheet

Analog & Power

MOSFET 2P-CH 20V 6A PPAK CHIPFET

ObsoletePowerPAK® ChipFET™ DualAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs59mOhm @ 3.5A, 4.5V
Base Product NumberSI5999
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds496pF @ 10V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C6A
Power - Max10.4W

Mechanical

Package / CasePowerPAK® ChipFET™ Dual
Supplier Device PackagePowerPAK® ChipFet Dual

Environmental

Operating Temperature-55°C ~ 150°C (TJ)