SI5902BDC-T1-E3

Vishay Siliconix

SI5902BDC-T1-E3

Datasheet

Analog & Power

MOSFET 2N-CH 30V 4A 1206-8

Discontinued8-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs65mOhm @ 3.1A, 10V
Base Product NumberSI5902
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 15V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusLast Time Buy
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Power - Max3.12W

Mechanical

Package / Case8-SMD, Flat Leads
Supplier Device Package1206-8 ChipFET™

Environmental

Operating Temperature-55°C ~ 150°C (TJ)