SI5513CDC-T1-E3

Vishay Siliconix

SI5513CDC-T1-E3

Datasheet

Analog & Power

MOSFET N/P-CH 20V 4A/3.7A 1206-8

Active8-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 4.3A, 4.5V
Base Product NumberSI5513
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds285pF @ 10V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C4A, 3.7A
Power - Max3.1W

Mechanical

Package / Case8-SMD, Flat Leads
Supplier Device Package1206-8 ChipFET™

Environmental

Operating Temperature-55°C ~ 150°C (TJ)