SI5471DC-T1-GE3

Vishay Siliconix

SI5471DC-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 20V 6A 1206-8

Active8-SMD, Flat LeadsAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 9.1A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2945 pF @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Max Power Dissipation2.5W (Ta), 6.3W (Tc)

Mechanical

Package / Case8-SMD, Flat Leads
Supplier Device Package1206-8 ChipFET™

Environmental

Operating Temperature-55°C ~ 150°C (TJ)