SI5461EDC-T1-E3

Vishay Siliconix

SI5461EDC-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 20V 4.5A 1206-8

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 5A, 4.5V
Base Product NumberSI5461
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

Environmental

Operating Temperature-55°C~150°C(TJ)