SI5443DC-T1-E3

Vishay Siliconix

SI5443DC-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 20V 3.6A 1206-8

Active8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs65mOhm @ 3.6A, 4.5V
Base Product NumberSI5443
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

Environmental

Operating Temperature-55°C~150°C(TJ)