SI5435BDC-T1-E3

Vishay Siliconix

SI5435BDC-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 30V 4.3A 1206-8

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs45mOhm @ 4.3A, 10V
Base Product NumberSI5435
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

Environmental

Operating Temperature-55°C~150°C(TJ)