SI5406DC-T1-E3

Vishay Siliconix

SI5406DC-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 12V 6.9A 1206-8

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs20mOhm @ 6.9A, 4.5V
Base Product NumberSI5406
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id600mV @ 1.2mA (Min)

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.9A (Ta)
Max Power Dissipation1.3W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

Environmental

Operating Temperature-55°C~150°C(TJ)