SI4946CDY-T1-GE3

Vishay Siliconix

SI4946CDY-T1-GE3

Datasheet

Analog & Power

MOSFET 2N-CH 60V 5.2A/6.1A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs40.9mOhm @ 5.2A, 10V
Base Product NumberSI4946
Configuration2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 30V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C5.2A (Ta), 6.1A (Tc)
Power - Max2W (Ta), 2.8W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)