SI4936CDY-T1-E3

Vishay Siliconix

SI4936CDY-T1-E3

Datasheet

Analog & Power

MOSFET 2N-CH 30V 5.8A 8SOIC

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs40mOhm @ 5A, 10V
Base Product NumberSI4936
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds325pF @ 15V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C5.8A
Power - Max2.3W

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)