SI4890DY-T1-E3

Vishay Siliconix

SI4890DY-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 30V 11A 8-SOIC

Discontinued8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12mOhm @ 11A, 10V
Base Product NumberSI4890
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusLast Time Buy
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id800mV @ 250µA (Min)

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Max Power Dissipation2.5W (Ta)

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)