Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 30 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) Cut Tape (CT) |
| Part Status | Active |
| Series | TrenchFET® Gen IV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 11.3A (Tc) |
| Max Power Dissipation | 2.5W (Ta), 4.5W (Tc) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
|---|---|
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C ~ 150°C (TJ) |
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