SI4838BDY-T1-GE3

Vishay Siliconix

SI4838BDY-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 12V 34A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.7mOhm @ 15A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5760 pF @ 6 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Max Power Dissipation2.5W (Ta), 5.7W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C~150°C(TJ)