SI4831BDY-T1-E3

Vishay Siliconix

SI4831BDY-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 30V 6.6A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs42mOhm @ 5A, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds625 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesLITTLE FOOT®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
Max Power Dissipation2W (Ta), 3.3W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C~150°C(TJ)