SI4814BDY-T1-GE3

Vishay Siliconix

SI4814BDY-T1-GE3

Datasheet

Analog & Power

MOSFET 2N-CH 30V 10A/10.5A 8SOIC

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 10A, 10V
Base Product NumberSI4814
Configuration2 N-Channel (Half Bridge)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesLITTLE FOOT®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C10A, 10.5A
Power - Max3.3W, 3.5W

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)