SI4808DY-T1-E3

Vishay Siliconix

SI4808DY-T1-E3

Datasheet

Analog & Power

MOSFET 2N-CH 30V 5.7A 8SOIC

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs22mOhm @ 7.5A, 10V
Base Product NumberSI4808
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesLITTLE FOOT®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id800mV @ 250µA (Min)

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C5.7A
Power - Max1.1W

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)