SI4421DY-T1-GE3

Vishay Siliconix

SI4421DY-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 20V 10A 8SO

Discontinued8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.75mOhm @ 14A, 4.5V
Base Product NumberSI4421
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs125 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusLast Time Buy
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id800mV @ 850µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Max Power Dissipation1.5W (Ta)

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)