SI4103DY-T1-GE3

Vishay Siliconix

SI4103DY-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 30V 14A/16A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.9mOhm @ 10A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5200 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET® Gen III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 16A (Tc)
Max Power Dissipation2.5W (Ta), 5.2W (Tc)

Mechanical

Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature-55°C ~ 150°C (TJ)