SI4056ADY-T1-GE3

Vishay Siliconix

SI4056ADY-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 100V 5.9A/8.3A 8SOIC

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs29.2mOhm @ 5.9A, 10V
Base Product NumberSI4056
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1330 pF @ 50 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C5.9A (Ta), 8.3A (Tc)
Max Power Dissipation2.5W (Ta), 5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C~150°C(TJ)