SI3495DV-T1-E3

Vishay Siliconix

SI3495DV-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 20V 5.3A 6TSOP

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs24mOhm @ 7A, 4.5V
Base Product NumberSI3495
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±5V
Vgs(th) (Max) @ Id750mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Max Power Dissipation1.1W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)