SI3476DV-T1-GE3

Vishay Siliconix

SI3476DV-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 80V 4.6A 6TSOP

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs93mOhm @ 3.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds195 pF @ 40 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Max Power Dissipation2W (Ta), 3.6W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Environmental

Operating Temperature-55°C~150°C(TJ)