SI3475DV-T1-GE3

Vishay Siliconix

SI3475DV-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 200V 0.95A 6-TSOP

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.61Ohm @ 900mA, 10V
Base Product NumberSI3475
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 50 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Current - Continuous Drain (Id) @ 25°C950mA (Tc)

Mechanical

PackageCut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP