Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.7A, 10V |
|---|---|
| Base Product Number | SI3469 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Max Power Dissipation | 1.14W (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
| Operating Temperature | -55°C~150°C(TJ) |
|---|