SI3464DV-T1-BE3

Vishay Siliconix

SI3464DV-T1-BE3

Datasheet

Analog & Power

N-CHANNEL 20-V (D-S) MOSFET

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs24mOhm @ 7.5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1065 pF @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta), 8A (Tc)
Max Power Dissipation2W (Ta), 3.6W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Environmental

Operating Temperature-55°C~150°C(TJ)