SI3445DV-T1-E3

Vishay Siliconix

SI3445DV-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 8V 6TSOP

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs42mOhm @ 5.6A, 4.5V
Base Product NumberSI3445
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage8 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C5.6A (Ta)
Max Power Dissipation2W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Environmental

Operating Temperature-55°C~150°C(TJ)