SI3440ADV-T1-BE3

Vishay Siliconix

SI3440ADV-T1-BE3

Datasheet

Analog & Power

N-CHANNEL 150-V (D-S) MOSFET

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs380mOhm @ 1.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds80 pF @ 75 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage150 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta), 2.2A (Tc)
Max Power Dissipation2W (Ta), 3.6W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Environmental

Operating Temperature-55°C~150°C(TJ)