SI3430DV-T1-E3

Vishay Siliconix

SI3430DV-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 100V 1.8A 6TSOP

ActiveSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs170mOhm @ 2.4A, 10V
Base Product NumberSI3430
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.6 nC @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA (Min)

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Max Power Dissipation1.14W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

Environmental

Operating Temperature-55°C~150°C(TJ)