SI3424DV-T1-E3

Vishay Siliconix

SI3424DV-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 30V 5A 6-TSOP

ObsoleteSOT-23-6 Thin, TSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs28mOhm @ 6.7A, 10V
Base Product NumberSI3424
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id800mV @ 250µA (Min)

Electrical

Drain-to-Source Voltage30 V
Current - Continuous Drain (Id) @ 25°C5A (Ta)

Mechanical

PackageCut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP