SI2377EDS-T1-GE3

Vishay Siliconix

SI2377EDS-T1-GE3

Datasheet

Analog & Power

MOSFET P-CH 20V 4.4A SOT23-3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs61mOhm @ 3.2A, 4.5V
Base Product NumberSI2377
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 8 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
Max Power Dissipation1.25W (Ta), 1.8W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

Environmental

Operating Temperature-55°C~150°C(TJ)