SI2351DS-T1-E3

Vishay Siliconix

SI2351DS-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 20V 2.8A SOT23-3

ObsoleteTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs115mOhm @ 2.4A, 4.5V
Base Product NumberSI2351
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs5.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)

Mechanical

PackageCut Tape (CT)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)