Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 75mOhm @ 2.7A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 20 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | TrenchFET® Gen III |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-to-Source Voltage | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta), 3.6A (Tc) |
| Max Power Dissipation | 1W (Ta), 1.7W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Operating Temperature | -55°C~150°C(TJ) |
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