SI2314EDS-T1-E3

Vishay Siliconix

SI2314EDS-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 20V 3.77A SOT23-3

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs33mOhm @ 5A, 4.5V
Base Product NumberSI2314
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id950mV @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.77A (Ta)
Max Power Dissipation750mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

Environmental

Operating Temperature-55°C~150°C(TJ)