SI1965DH-T1-BE3

Vishay Siliconix

SI1965DH-T1-BE3

Datasheet

Analog & Power

MOSFET 2P-CH 12V 1.3A SC70-6

Active6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs390mOhm @ 1A, 4.5V
Base Product NumberSI1965
Configuration2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds120pF @ 6V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage12V
Current - Continuous Drain (Id) @ 25°C1.14A (Ta), 1.3A (Tc)
Power - Max740mW (Ta), 1.25W (Tc)

Mechanical

Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)