SI1480DH-T1-BE3

Vishay Siliconix

SI1480DH-T1-BE3

Datasheet

Analog & Power

MOSFET N-CH 100V 2.1A/2.6A SC70

Active6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs200mOhm @ 1.9A, 10V
Base Product NumberSI1480
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds130 pF @ 50 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Current - Continuous Drain (Id) @ 25°C2.1A (Ta), 2.6A (Tc)
Max Power Dissipation1.5W (Ta), 2.8W (Tc)

Mechanical

Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)