SI1470DH-T1-E3

Vishay Siliconix

SI1470DH-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 30V 5.1A SC70-6

Obsolete6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs66mOhm @ 3.8A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.6V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C5.1A (Tc)
Max Power Dissipation1.5W (Ta), 2.8W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

Environmental

Operating Temperature-55°C~150°C(TJ)