SI1426DH-T1-E3

Vishay Siliconix

SI1426DH-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 30V 2.8A SC70-6

Obsolete6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs75mOhm @ 3.6A, 10V
Base Product NumberSI1426
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Max Power Dissipation1W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

Environmental

Operating Temperature-55°C~150°C(TJ)