SI1419DH-T1-E3

Vishay Siliconix

SI1419DH-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 200V 300MA SC70-6

Obsolete6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5Ohm @ 400mA, 10V
Base Product NumberSI1419
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.2 nC @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 100µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Max Power Dissipation1W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

Environmental

Operating Temperature-55°C~150°C(TJ)