SI1417EDH-T1-E3

Vishay Siliconix

SI1417EDH-T1-E3

Datasheet

Analog & Power

MOSFET P-CH 12V 2.7A SC70-6

Obsolete6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs85mOhm @ 3.3A, 4.5V
Base Product NumberSI1417
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Max Power Dissipation1W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

Environmental

Operating Temperature-55°C ~ 150°C (TJ)