SI1416EDH-T1-GE3

Vishay Siliconix

SI1416EDH-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 30V 3.9A SOT-363

Active6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs58mOhm @ 3.1A, 10V
Base Product NumberSI1416
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.4V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)
Max Power Dissipation2.8W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

Environmental

Operating Temperature-55°C~150°C(TJ)