SI1304BDL-T1-E3

Vishay Siliconix

SI1304BDL-T1-E3

Datasheet

Analog & Power

MOSFET N-CH 30V 900MA SC70-3

ObsoleteSC-70, SOT-323Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs270mOhm @ 900mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds100 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C900mA (Tc)
Max Power Dissipation340mW (Ta), 370mW (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70-3

Environmental

Operating Temperature-55°C~150°C(TJ)