SI1078X-T1-GE3

Vishay Siliconix

SI1078X-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 30V 1.02A SOT563F

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs142mOhm @ 1A, 10V
Base Product NumberSI1078
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds110 pF @ 15 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C1.02A (Tc)
Max Power Dissipation240mW (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSOT-563, SOT-666

Environmental

Operating Temperature-55°C~150°C(TJ)