Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 167mOhm @ 960mA, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 15 V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.45V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 960mA (Ta) |
| Max Power Dissipation | 236mW (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SC-89 (SOT-563F) |
| Operating Temperature | -55°C~150°C(TJ) |
|---|