SI1062X-T1-GE3

Vishay Siliconix

SI1062X-T1-GE3

Datasheet

Analog & Power

MOSFET N-CH 20V SC89-3

ActiveSC-89, SOT-490Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs420mOhm @ 500mA, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds43 pF @ 10 V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
Product StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C530mA (Ta)
Max Power Dissipation220mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-89, SOT-490
Supplier Device PackageSC-89-3

Environmental

Operating Temperature-55°C~150°C(TJ)