SI1025X-T1-GE3

Vishay Siliconix

SI1025X-T1-GE3

Datasheet

Analog & Power

MOSFET 2P-CH 60V 0.19A SC89

ActiveSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4Ohm @ 500mA, 10V
Base Product NumberSI1025
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs1.7nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds23pF @ 25V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusActive
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C190mA
Power - Max250mW

Mechanical

Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89 (SOT-563F)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)