SI1023X-T1-E3

Vishay Siliconix

SI1023X-T1-E3

Datasheet

Analog & Power

MOSFET 2P-CH 20V 0.37A SC89

ObsoleteSOT-563, SOT-666Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.2Ohm @ 350mA, 4.5V
Base Product NumberSI1023
Configuration2 P-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V
ManufacturerVishay Siliconix
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusObsolete
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id450mV @ 250µA (Min)

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C370mA
Power - Max250mW

Mechanical

Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89 (SOT-563F)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)